Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10288690" target="_blank" >RIV/00216208:11320/14:10288690 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1021/nl502069d" target="_blank" >http://dx.doi.org/10.1021/nl502069d</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/nl502069d" target="_blank" >10.1021/nl502069d</a>

Result language

angličtina

Original language name

Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions

Original language description

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared toconventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(000 (1) over bar) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Nano Letters

ISSN

1530-6984

e-ISSN

—

Volume of the periodical

14

Issue of the periodical within the volume

9

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

5170-5175

UT code for WoS article

000341544500038

EID of the result in the Scopus database

—