Composition Tailoring in Ce-Doped Multicomponent Garnet Epitaxial Film Scintillators
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10316210" target="_blank" >RIV/00216208:11320/15:10316210 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/15:00241332
Result on the web
<a href="http://dx.doi.org/10.1021/acs.cgd.5b00309" target="_blank" >http://dx.doi.org/10.1021/acs.cgd.5b00309</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.cgd.5b00309" target="_blank" >10.1021/acs.cgd.5b00309</a>
Alternative languages
Result language
angličtina
Original language name
Composition Tailoring in Ce-Doped Multicomponent Garnet Epitaxial Film Scintillators
Original language description
Bulk single crystals of multicomponent garnet scintillators Lu3-xGdxGay-Al5-yO12:Ce exhibit much improved scintillation properties in optimized composition islands (x = 2-3, y = 2-3) compared to the simple Lu3Al5O12:Ce one. Namely, a Mulch higher light yield, less intense slow component in the scintillation response, and better energy resolution have been achieved. This work shows that comparable enhancement of the scintillation performance can be reached also in the case of epitaxial garnet films of similar composition though the nature of trapping states acting in the transfer stage of the scintillation mechanism may be different. This is the first time that excellent scintillation properties were reproduced in epitaxial films. Lu3-xGdxGayAl5-yO12:Cesamples were grown by liquid phase epitaxy from BaO-B2O3-BaF2 flux and quantitatively compared with top performance bulk crystals as concerns light yield, energy resolution, scintillation decay, and afterglow characteristics. Reported ch
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP204%2F12%2F0805" target="_blank" >GAP204/12/0805: Advanced material solutions for thin film scintillators and light transformers</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Crystal Growth and Design
ISSN
1528-7483
e-ISSN
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Volume of the periodical
15
Issue of the periodical within the volume
8
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
3715-3723
UT code for WoS article
000359278800022
EID of the result in the Scopus database
2-s2.0-84938651172