Diverse growth of Mn, In and Sn islands on thallium-passivated Si(111) surface

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10319395" target="_blank" >RIV/00216208:11320/15:10319395 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.apsusc.2015.01.067" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2015.01.067</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2015.01.067" target="_blank" >10.1016/j.apsusc.2015.01.067</a>

Result language
angličtina
Original language name
Diverse growth of Mn, In and Sn islands on thallium-passivated Si(111) surface
Original language description
Controlled growth of thin films on highly reactive silicon surfaces has been a challenge for decades. High density of surface dangling bonds, however, hinders the adsorbate diffusion and its self-organization. In our work, we propose a novel use of the T1-(1 x 1) layer as a passivating agent, which highly enhances diffusion of adsorbates by saturating all dangling bonds of the Si substrate. We use room-temperature scanning tunneling microscopy to study structures formed on the Si(1 1 I)/T1 - (1 x 1) surface after deposition of submonolayer amounts of three elemental adsorbates: Mn, In and Sn. As a result, three significantly different surface structures are observed. Manganese atoms aggregate to stable dendritic islands nucleated on Si steps. Indium islands are compact and unstable during observation. Unlike Mn and In, Sn atoms intermix with Tl atoms and arrange into an array of triangular objects. The growth kinetics of the three deposited metals on the Tl - (1 x 1) layer is discussed
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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