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Analysis of trapping and de-trapping in CdZnTe detectors by Pockels effect

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10328931" target="_blank" >RIV/00216208:11320/16:10328931 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1088/0022-3727/49/37/375101" target="_blank" >http://dx.doi.org/10.1088/0022-3727/49/37/375101</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/0022-3727/49/37/375101" target="_blank" >10.1088/0022-3727/49/37/375101</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Analysis of trapping and de-trapping in CdZnTe detectors by Pockels effect

  • Original language description

    In this contribution we introduce a method of deep level spectroscopy in semi-insulating semiconductors demonstrated on detector-grade bulk CdZnTe. The method is based on the measurements of temporal and temperature evolution of the electric field profile in studied samples, which is very sensitive to a change of occupancy of deep levels. The measurement of the electric field is based on the linear electro-optic (Pockels) effect using the InGaAs avalanche photodiode with fast response. The internal electric field profile in studied samples significantly changes under various external conditions represented by the application of the bias and pulsed illumination with below-bandgap light. From the knowledge of the electric field behavior and using a standard analysis based on thermally induced transitions of electrons and holes from the deep levels to the conduction and valence bands, respectively, it is possible to get activation energies of the energy levels, their types (donor or acceptor) and corresponding capture cross-sections. By this method we have found deep levels responsible for the polarization of CdZnTe detector under high photon-fluxes. Identified deep levels E-v + 0.41 eV, E-v + 0.77 eV and E-v + 0.94 eV can capture the photo-generated holes and thus form a positive space charge, which is responsible for polarization of the detector.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Physics D - Applied Physics

  • ISSN

    0022-3727

  • e-ISSN

  • Volume of the periodical

    49

  • Issue of the periodical within the volume

    37

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    8

  • Pages from-to

  • UT code for WoS article

    000384093000007

  • EID of the result in the Scopus database

    2-s2.0-84989158663