Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10330445" target="_blank" >RIV/00216208:11320/16:10330445 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1103/PhysRevB.94.075306" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.94.075306</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.94.075306" target="_blank" >10.1103/PhysRevB.94.075306</a>
Alternative languages
Result language
angličtina
Original language name
Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction
Original language description
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p-n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 mu m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p-n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p-n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p-n bias.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GB14-37427G" target="_blank" >GB14-37427G: Center of spintronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
PHYSICAL REVIEW B
ISSN
2469-9950
e-ISSN
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Volume of the periodical
94
Issue of the periodical within the volume
7
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
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UT code for WoS article
000381308700006
EID of the result in the Scopus database
2-s2.0-84981294491