Optimisation of Ion Beam Etching Process for Fabrication of CoFeB/MgO Magnetic Tunnel Junctions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10334532" target="_blank" >RIV/00216208:11320/16:10334532 - isvavai.cz</a>
Result on the web
<a href="http://www.mff.cuni.cz/veda/konference/wds/proc/pdf16/WDS16_25_f2_Zanaska.pdf" target="_blank" >http://www.mff.cuni.cz/veda/konference/wds/proc/pdf16/WDS16_25_f2_Zanaska.pdf</a>
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Optimisation of Ion Beam Etching Process for Fabrication of CoFeB/MgO Magnetic Tunnel Junctions
Original language description
. We present results on CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions (MTJ) with particular focus on the ion beam etching process of the pillars. The samples were etched at the angle of 45o using different photoresist layer thicknesses, which significantly influences the resulting tunnel magnetoresistance ratio (TMR) and junction stability. The shape of the resulting pillars was investigated by AFM. In-plane TMRs of 270-276 % were reproducibly achieved at room temperature.
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
—
Result continuities
Project
—
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
WDS'16 Proceedings of Contributed Papers - Physics
ISBN
978-80-7378-333-4
ISSN
—
e-ISSN
—
Number of pages
5
Pages from-to
150-154
Publisher name
Matfyzpress
Place of publication
Praha
Event location
Prague, Czech Republic
Event date
Jun 7, 2016
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
—