Probing silicon quantum dots by single-dot techniques

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10367385" target="_blank" >RIV/00216208:11320/17:10367385 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1088/1361-6528/aa542b" target="_blank" >http://dx.doi.org/10.1088/1361-6528/aa542b</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6528/aa542b" target="_blank" >10.1088/1361-6528/aa542b</a>

Result language

angličtina

Original language name

Probing silicon quantum dots by single-dot techniques

Original language description

Silicon nanocrystals represent an important class of non-toxic, heavy-metal free quantum dots, where the high natural abundance of silicon is an additional advantage. Successful development in mass-fabrication, starting from porous silicon to recent advances in chemical and plasma synthesis, opens up new possibilities for applications in optoelectronics, bio-imaging, photovoltaics, and sensitizing areas. In this review basic physical properties of silicon nanocrystals revealed by photoluminescence spectroscopy, lifetime, intensity trace and electrical measurements on individual nanoparticles are summarized. The fabrication methods developed for accessing single Si nanocrystals are also reviewed. It is concluded that silicon nanocrystals share many of the properties of direct bandgap nanocrystals exhibiting sharp emission lines at low temperatures, on/off blinking, spectral diffusion etc. An analysis of reported results is provided in comparison with theory and with direct bandgap material quantum dots. In addition, the role of passivation and inherent interface/matrix defects is discussed.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/LC510" target="_blank" >LC510: Center of nanotechnology and materials for nanoelectronics</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Nanotechnology

ISSN

0957-4484

e-ISSN

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Volume of the periodical

28

Issue of the periodical within the volume

7

Country of publishing house

GB - UNITED KINGDOM

Number of pages

27

Pages from-to

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UT code for WoS article

000393910000001

EID of the result in the Scopus database

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