Thermally stimulated exciton emission in Si nanocrystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10384573" target="_blank" >RIV/00216208:11320/18:10384573 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1038/lsa.2017.133" target="_blank" >https://doi.org/10.1038/lsa.2017.133</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/lsa.2017.133" target="_blank" >10.1038/lsa.2017.133</a>

Result language

angličtina

Original language name

Thermally stimulated exciton emission in Si nanocrystals

Original language description

Increasing temperature is known to quench the excitonic emission of bulk silicon, which is due to thermally induced dissociation of excitons. Here, we demonstrate that the effect of temperature on the excitonic emission is reversed for quantum-confined silicon nanocrystals. Using laser-induced heating of silicon nanocrystals embedded in SiO2, we achieved a more than threefold (&gt;300%) increase in the radiative (photon) emission rate. We theoretically modeled the observed enhancement in terms of the thermally stimulated effect, taking into account the massive phonon production under intense illumination. These results elucidate one more important advantage of silicon nanostructures, illustrating that their optical properties can be influenced by temperature. They also provide an important insight into the mechanisms of energy conversion and dissipation in ensembles of silicon nanocrystals in solid matrices. In practice, the radiative rate enhancement under strong continuous wave optical pumping is relevant for the possible application of silicon nanocrystals for spectral conversion layers in concentrator photovoltaics.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10306 - Optics (including laser optics and quantum optics)

Project

<a href="/en/project/GC16-09745J" target="_blank" >GC16-09745J: Understanding the Luminescence Efficiency of Silicon Quantum Dots</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Light-Science &amp; Applications

ISSN

2047-7538

e-ISSN

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Volume of the periodical

7

Issue of the periodical within the volume

26 January 2018

Country of publishing house

GB - UNITED KINGDOM

Number of pages

7

Pages from-to

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UT code for WoS article

000424453600008

EID of the result in the Scopus database

2-s2.0-85041901881