ZO phonon of a buffer layer and Raman mapping of hydrogenated buffer on SiC(0001)

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10388857" target="_blank" >RIV/00216208:11320/19:10388857 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=.VklyQq~0T" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=.VklyQq~0T</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/jrs.5533" target="_blank" >10.1002/jrs.5533</a>

Result language
angličtina
Original language name
ZO phonon of a buffer layer and Raman mapping of hydrogenated buffer on SiC(0001)
Original language description
We have measured spatial Raman maps of hydrogen intercalated quasi-free standing monolayer graphene (QFSMLG) on SiC(0001). We compare Raman spectra of QFSMLG with spectra of bare buffer layer, single-layer graphene, and bare SiC substrate.We also present the evolution of QFSMLG Raman spectra with the temperature and duration of hydrogen intercalation. We present new Raman modes, and, on the basis of polarization resolved measurements, we attribute them to the totally symmetric out-of-plane optical phonon (ZO) modes of the buffer layer at the Γ and M points. We show that these modes are eliminated by hydrogen intercalation; thus, they indicate onset of buffer layer decoupling from the SiC substrate. The spatial mapping of Raman scattering reveals details of the optimal hydrogen intercalation at elevated temperatures. Further increase of the intercalation temperature leads to etching of the buffer layer and underlying SiC substrate. Therefore, we show that interplay between temperature and intercalation time is a promising route towards increased graphene grain size with reduced lattice strain.
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GJ16-15763Y" target="_blank" >GJ16-15763Y: Tuneable electronic and optoelectronic devices on the epitaxial graphene/SiC platform</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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