Pathways of carrier recombination in Si/SiO2 nanocrystal superlattices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10403021" target="_blank" >RIV/00216208:11320/19:10403021 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=fpeRNj0ZX3" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=fpeRNj0ZX3</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.5116778" target="_blank" >10.1063/1.5116778</a>
Alternative languages
Result language
angličtina
Original language name
Pathways of carrier recombination in Si/SiO2 nanocrystal superlattices
Original language description
We investigated picosecond carrier recombination in Si/SiO2 nanocrystal superlattices by ultrafast transient transmission, time-resolved photoluminescence, and Raman spectroscopy. The recombination is of multicarrier origin and it depends strongly on the nanoscale structure of the samples (e.g., crystallinity, percolation, and size distribution). Several recombination pathways were found, including Auger recombination, trapped-carrier Auger recombination, exciton-exciton recombination, and subsequent trapping in band tail states of amorphous silicon phase. The sample microscopic structure is determined using a single parameter, the stoichiometric parameter x, during the plasma-enhanced chemical-vapor deposition process. The percolated samples are hot candidates for all-silicon tandem photovoltaic solar cells in the future. Published under license by AIP Publishing.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
126
Issue of the periodical within the volume
16
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
163101
UT code for WoS article
000504001300001
EID of the result in the Scopus database
2-s2.0-85074225206