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Electronic properties of GaAsBi(001) alloys at low Bi content

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10425676" target="_blank" >RIV/00216208:11320/19:10425676 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/19:00509391

  • Result on the web

    <a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=u1gRSebKM1" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=u1gRSebKM1</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1103/PhysRevMaterials.3.044601" target="_blank" >10.1103/PhysRevMaterials.3.044601</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Electronic properties of GaAsBi(001) alloys at low Bi content

  • Original language description

    We present an in-depth investigation of structural and electronic properties of GaAsBi epilayers. High (001) crystalline order is achieved using careful molecular beam epitaxy and surface preparation procedures. High surface order allows us to use x-ray, ultraviolet, and angle-resolved photoemission spectroscopy at variable photon energies and to disentangle electronic effects of an atomically thin Bi-rich surface layer with (2 x 3) symmetry from those of Bi atoms incorporated in the GaAs bulk matrix. The influence of bulk-integrated Bi concentrations on the GaAs band structure becomes visible in angle-resolved photoemission after removing Bi-rich surface layers by a brief and mild ion bombardment and subsequent annealing treatment. Experimental observations are supported by density functional theory simulations of the valence band structure of bulk and surface-reconstructed GaAs with and without Bi. Bi-induced energy shifts in the dispersion of GaAs heavy and light hole bulk bands are evident both in experiment and theory, which are relevant for modulations in the optical band gap and thus optoelectronic applications.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10305 - Fluids and plasma physics (including surface physics)

Result continuities

  • Project

  • Continuities

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physical Review Materials

  • ISSN

    2475-9953

  • e-ISSN

  • Volume of the periodical

    3

  • Issue of the periodical within the volume

    4

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    14

  • Pages from-to

    044601

  • UT code for WoS article

    000463911400001

  • EID of the result in the Scopus database

    2-s2.0-85064162860