Origin of Defects and Positron Annihilation in Hybrid and All-Inorganic Perovskites
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F22%3A10437871" target="_blank" >RIV/00216208:11320/22:10437871 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=C533DxkSax" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=C533DxkSax</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.chemmater.1c03540" target="_blank" >10.1021/acs.chemmater.1c03540</a>
Alternative languages
Result language
angličtina
Original language name
Origin of Defects and Positron Annihilation in Hybrid and All-Inorganic Perovskites
Original language description
Emerging metal-halide perovskites (MHPs) have shown advanced charge transport properties suitable for application in solar cells, photodetectors, and many more. While the past decade witnessed tremendous progress in MHPs, very little is known about the origin of defects and their effect on carrier lifetime. In this study, we compare hybrid and all-inorganic MHPs prepared by inverse temperature solution and high-temperature melt growth to explore the influence of material preparation on the formation of defects. The presence of a low concentration of vacancies was shown in all MHPs regardless of their synthesis method demonstrated by the interaction of positron particles with vacancies and lattices of MHPs and explained by ab initio simulation of positron annihilation. We combined the Raman, Fourier transform infrared (FTIR), and positron annihilation spectroscopy methods to establish the nature of imperfections in MHPs grown using different methods. Our Raman and FTIR results reveal that only the solution-grown crystals are prone to the incorporation of a solvent in bulk during synthesis. In vast majority of studies, the charge carrier lifetime is explored using photoluminescence (PL) spectroscopy as it is a readily available method. However, PL is very sensitive to both bulk and surface recombination phenomena. Combining current waveform time-of-flight and time-resolved photoluminescence spectroscopy methods, the bulk recombination differs by a factor of 2 from crystals grown by solution versus high-temperature melt. The results propose that solvent trapping matters, not intrinsic defects. The study also suggests potential pathways for further improvement of hybrid and all-inorganic MHPs.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)
Result continuities
Project
<a href="/en/project/GA19-11920S" target="_blank" >GA19-11920S: Charge transport in pixelated CdZnTe radiation detectors</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Chemistry of Materials
ISSN
0897-4756
e-ISSN
1520-5002
Volume of the periodical
2022
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
297-306
UT code for WoS article
000734489000001
EID of the result in the Scopus database
2-s2.0-85122008378