Tailoring opto-electronic and interface properties via electrochemical doping in Poly(3-hexylthiophene)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10469804" target="_blank" >RIV/00216208:11320/23:10469804 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=2GEjYAVP5t" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=2GEjYAVP5t</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.cap.2023.05.007" target="_blank" >10.1016/j.cap.2023.05.007</a>
Alternative languages
Result language
angličtina
Original language name
Tailoring opto-electronic and interface properties via electrochemical doping in Poly(3-hexylthiophene)
Original language description
The thin films of electropolymerized poly(3-hexylthiophene) [e-P3HT] are simultaneously doped on the transparent indium tin oxide substrate via anodic oxidation. Distinctive doping levels are achieved by systematically de-doping the films in a reverse bias electrochemical process. Raman characterization shows the presence of doping-induced polarons. In the UV-Vis spectrum, two distinct absorption regions are found for P3HT suggesting the presence of doping-induced polarons and the Urbach calculations reveal a fine-tuning of bandgap with doping level. Further, the PL studies show exponential quenching in intensity due to charge transfer which can be precisely tuned by the doping level in the e-P3HT. The current-voltage measurements under the illumination of a 532 nm laser on a sandwich device with top contact of silver are also performed and it is found that an optimized doping level is essential to acquire the best photo response. Impedance spectroscopy on the devices and their equivalent circuit analysis reveals that in addition to the bulk system, doping can also vastly modify the interfacial properties. Our studies pave the direction to tailor and optimize different optoelectronic and interfacerelated properties of e-P3HT thin films via electrochemical doping for optimized optoelectronic devices and applied physics studies.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Current applied physics
ISSN
1567-1739
e-ISSN
1878-1675
Volume of the periodical
52
Issue of the periodical within the volume
52
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
8
Pages from-to
57-64
UT code for WoS article
001012620400001
EID of the result in the Scopus database
2-s2.0-85160508799