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Ultrafast room-temperature valley manipulation in silicon and diamond

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F25%3A10500803" target="_blank" >RIV/00216208:11320/25:10500803 - isvavai.cz</a>

  • Result on the web

    <a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=GhrC_8SXV6" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=GhrC_8SXV6</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1038/s41567-025-02862-4" target="_blank" >10.1038/s41567-025-02862-4</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Ultrafast room-temperature valley manipulation in silicon and diamond

  • Original language description

    Some semiconductors have more than one degenerate minimum of the conduction band in their band structure. These minima-known as valleys-can be used for storing and processing information, if it is possible to generate a difference in their electron populations. However, to compete with conventional electronics, it is necessary to develop universal and fast methods for controlling and reading the valley quantum number of the electrons. Even though selective optical manipulation of electron populations in inequivalent valleys has been demonstrated in two-dimensional crystals with broken time-reversal symmetry, such control is highly desired in many technologically important semiconductor materials, including silicon and diamond. We demonstrate an ultrafast technique for the generation and read-out of a valley-polarized population of electrons in bulk semiconductors on subpicosecond timescales. The principle is based on the unidirectional intervalley scattering of electrons accelerated by an oscillating electric field of linearly polarized infrared femtosecond pulses. Our results are an advance in the development of potential room-temperature valleytronic devices operating at terahertz frequencies and compatible with contemporary silicon-based technology.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10306 - Optics (including laser optics and quantum optics)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Nature Physics

  • ISSN

    1745-2473

  • e-ISSN

    1745-2481

  • Volume of the periodical

    21

  • Issue of the periodical within the volume

    6

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    12

  • Pages from-to

    947-952

  • UT code for WoS article

    001466240700001

  • EID of the result in the Scopus database

    2-s2.0-105002472803