Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F02%3A00007674" target="_blank" >RIV/00216224:14310/02:00007674 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
Original language description
Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA202%2F00%2F0354" target="_blank" >GA202/00/0354: Self-organisation processes on the interfaces during epitaxial growth of semiconductor superlattices</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review B
ISSN
0163-1829
e-ISSN
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Volume of the periodical
B66
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
13
Pages from-to
085321-085333
UT code for WoS article
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EID of the result in the Scopus database
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