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Annealing studies of high Ge composition Si/SiGe multilayers

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F04%3A00010958" target="_blank" >RIV/00216224:14310/04:00010958 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Annealing studies of high Ge composition Si/SiGe multilayers

  • Original language description

    Temperature stability of SiGe/Si (80% Ge) multilayers was studied using x-ray reflectivity during in-situ annealing at temperature 810C.

  • Czech name

    Studium žíhání multivrstev SiGe/Si s vysokým obsahem Ge

  • Czech description

    Byla studována teplotní stbilita multivrstev SiGe/Si (80% Ge) metodou rtg reflexe během žíhání in-situ při teplotě 810C.

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2004

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Zeitschrift fur Kristalographie

  • ISSN

    0044-2968

  • e-ISSN

  • Volume of the periodical

    219

  • Issue of the periodical within the volume

    4

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    6

  • Pages from-to

    195-200

  • UT code for WoS article

  • EID of the result in the Scopus database