Annealing studies of high Ge composition Si/SiGe multilayers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F04%3A00010958" target="_blank" >RIV/00216224:14310/04:00010958 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Annealing studies of high Ge composition Si/SiGe multilayers
Original language description
Temperature stability of SiGe/Si (80% Ge) multilayers was studied using x-ray reflectivity during in-situ annealing at temperature 810C.
Czech name
Studium žíhání multivrstev SiGe/Si s vysokým obsahem Ge
Czech description
Byla studována teplotní stbilita multivrstev SiGe/Si (80% Ge) metodou rtg reflexe během žíhání in-situ při teplotě 810C.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Zeitschrift fur Kristalographie
ISSN
0044-2968
e-ISSN
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Volume of the periodical
219
Issue of the periodical within the volume
4
Country of publishing house
DE - GERMANY
Number of pages
6
Pages from-to
195-200
UT code for WoS article
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EID of the result in the Scopus database
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