Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F05%3A00014386" target="_blank" >RIV/00216224:14310/05:00014386 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots
Original language description
We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relativeto the interfaces between the GaAs matrix and InAs dots are probed using polarized excitation and detection. We suggest a possible role of local fields in models of the matrix-dot mixtures in the in-plane anisotropic response.
Czech name
Anizotropie absorpce a luminiscence mnohovrstevných kvantových teček InAs/GaAs
Czech description
Výsledky fotoluminiscenčního studia multivrstev s MOVPE kvantovými tečkami InAs/GaAs na substrátech GaAs s orientací (001). Měření AFM indikují protažené tvary teček, orientované podél směru (1-10).

Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors
ISBN
0-7354-0257--4
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
753-754
Publisher name
American Institute of Physics
Place of publication
USA
Event location
Flagstaff
Event date
Jan 1, 2004
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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