High temperature investigations of Si/SiGe based cascade structures using x-ray scattering methods
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F05%3A00014587" target="_blank" >RIV/00216224:14310/05:00014587 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
High temperature investigations of Si/SiGe based cascade structures using x-ray scattering methods
Original language description
Temperature stability of SiGe/Si (80% Ge) structures was studied using x-ray reflectivity during in-situ annealing around temperature 790C.
Czech name
Vysokoteplotní studia kaskádových struktur na bázi Si/SiGe za použití metod rtg rozptylu
Czech description
Teplotní stabilita SiGe/Si struktur byla studována pomocí rtg reflektivity během žíhání in-situ v okolí teplot 790C.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
J. Phys. D: Appl. Phys.
ISSN
0022-3727
e-ISSN
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Volume of the periodical
38
Issue of the periodical within the volume
10A
Country of publishing house
GB - UNITED KINGDOM
Number of pages
5
Pages from-to
"A121"-"A125"
UT code for WoS article
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EID of the result in the Scopus database
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