HIGH TEMPERATURE INVESTIGATION OF SiGe/Si-BASED CASCADE EMITTERS IN THE FAR-INFRARED
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F05%3A00020143" target="_blank" >RIV/00216224:14310/05:00020143 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
HIGH TEMPERATURE INVESTIGATION OF SiGe/Si-BASED CASCADE EMITTERS IN THE FAR-INFRARED
Original language description
We have investigated annealing behavior of strain compensated Si/SiGe MQW structures with different multilayer periods, grown by molecular beam epitaxy on Si0.75Ge0.25 pseudo-substrates.
Czech name
—
Czech description
—
Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/GP202%2F05%2FP286" target="_blank" >GP202/05/P286: Investigation of morphology of semiconductor multilayers using x-ray scattering</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů