Diffuse X-ray scattering from GaN/SiC (0001) thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F06%3A00018331" target="_blank" >RIV/00216224:14310/06:00018331 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/06:00002399
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Diffuse X-ray scattering from GaN/SiC (0001) thin films
Original language description
Diffuse X-ray scattering from GaN/SiC (0001) thin films
Czech name
Difúzní rtg rozptyl na tenkých vrstvách GaN/SiC
Czech description
Difúzní rtg rozptyl na tenkých vrstvách GaN/SiC
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GP202%2F04%2FP258" target="_blank" >GP202/04/P258: Diffuse x-ray scattering from dislocations in epitaxial layers</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Zeitschrift für Kristallographie
ISSN
0044-2968
e-ISSN
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Volume of the periodical
141-146
Issue of the periodical within the volume
1
Country of publishing house
DE - GERMANY
Number of pages
5
Pages from-to
23-27
UT code for WoS article
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EID of the result in the Scopus database
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