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Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F07%3A00021888" target="_blank" >RIV/00216224:14310/07:00021888 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures

  • Original language description

    We report on photoluminescence of a series of vertically stacked multilayer quantum dot structures. Our analysis of the data taken at different excitation powers and in the magnetic field up to 24T yields a useful insight into the electronic structure ofthe InAs/GaAs quantum dot structures. The data are compared with results of model electronic structure calculations for flat dots, including the effects of the strain field. The calculations suggest that the difference between the energies of the groundand first excited transitions is mainly determined by the lateral dimensions of the dots. A comparison of the experimental results with the theoretical ones reveals an increase of the dot dimensions (both height and diameter) and a decrease of the aspect ratio (height/diameter) with increasing number of the quantum dot layers. For seven layer samples, the wavelength of 1:3 mm has been achieved. The increase of the thickness of the spacing layers between adjacent dot layers leads to a de

  • Czech name

    Fotoluminiscence a magnetofotoluminiscence vertikálně korelovaných kvantových teček InAs/GaAs

  • Czech description

    We report on photoluminescence of a series of vertically stacked multilayer quantum dot structures. Our analysis of the data taken at different excitation powers and in the magnetic field up to 24T yields a useful insight into the electronic structure ofthe InAs/GaAs quantum dot structures. The data are compared with results of model electronic structure calculations for flat dots, including the effects of the strain field. The calculations suggest that the difference between the energies of the groundand first excited transitions is mainly determined by the lateral dimensions of the dots. A comparison of the experimental results with the theoretical ones reveals an increase of the dot dimensions (both height and diameter) and a decrease of the aspect ratio (height/diameter) with increasing number of the quantum dot layers. For seven layer samples, the wavelength of 1:3 mm has been achieved. The increase of the thickness of the spacing layers between adjacent dot layers leads to a de

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2007

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physica E

  • ISSN

    1386-9477

  • e-ISSN

  • Volume of the periodical

    36

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    8

  • Pages from-to

    106

  • UT code for WoS article

  • EID of the result in the Scopus database