Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F07%3A00021888" target="_blank" >RIV/00216224:14310/07:00021888 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures
Original language description
We report on photoluminescence of a series of vertically stacked multilayer quantum dot structures. Our analysis of the data taken at different excitation powers and in the magnetic field up to 24T yields a useful insight into the electronic structure ofthe InAs/GaAs quantum dot structures. The data are compared with results of model electronic structure calculations for flat dots, including the effects of the strain field. The calculations suggest that the difference between the energies of the groundand first excited transitions is mainly determined by the lateral dimensions of the dots. A comparison of the experimental results with the theoretical ones reveals an increase of the dot dimensions (both height and diameter) and a decrease of the aspect ratio (height/diameter) with increasing number of the quantum dot layers. For seven layer samples, the wavelength of 1:3 mm has been achieved. The increase of the thickness of the spacing layers between adjacent dot layers leads to a de
Czech name
Fotoluminiscence a magnetofotoluminiscence vertikálně korelovaných kvantových teček InAs/GaAs
Czech description
We report on photoluminescence of a series of vertically stacked multilayer quantum dot structures. Our analysis of the data taken at different excitation powers and in the magnetic field up to 24T yields a useful insight into the electronic structure ofthe InAs/GaAs quantum dot structures. The data are compared with results of model electronic structure calculations for flat dots, including the effects of the strain field. The calculations suggest that the difference between the energies of the groundand first excited transitions is mainly determined by the lateral dimensions of the dots. A comparison of the experimental results with the theoretical ones reveals an increase of the dot dimensions (both height and diameter) and a decrease of the aspect ratio (height/diameter) with increasing number of the quantum dot layers. For seven layer samples, the wavelength of 1:3 mm has been achieved. The increase of the thickness of the spacing layers between adjacent dot layers leads to a de
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica E
ISSN
1386-9477
e-ISSN
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Volume of the periodical
36
Issue of the periodical within the volume
1
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
8
Pages from-to
106
UT code for WoS article
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EID of the result in the Scopus database
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