Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F08%3A00026016" target="_blank" >RIV/00216224:14310/08:00026016 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths

Original language description

Low-k dielectrics prepared by CVD in the form of 200 nm thick layers on Si wafers were thermally treated at 410 C and irradiated using UV lamps emitting photons of different wavelengths around 172 nm, 185 nm, and 222 nm. The treatment was performed in high vacuum and under a nitrogen atmosphere at various pressures ranging from 0.1 mbar up to 700 mbar. Subsequently, the samples were investigated using FTIR transmission spectroscopy, contact angle measurement, X-ray photoelectron spectrometry (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray reflectometry (XRR), surface acoustic wave spectrometry (SAW), and purged UV spectroscopic ellipsometry (PUVSE).

Czech name

Vliv tlaku na účinnost UV ošetření CVD low-k materiálů za použití různých vlnových délek

Czech description

Low-k dielectrics prepared by CVD in the form of 200 nm thick layers on Si wafers were thermally treated at 410 C and irradiated using UV lamps emitting photons of different wavelengths around 172 nm, 185 nm, and 222 nm. The treatment was performed in high vacuum and under a nitrogen atmosphere at various pressures ranging from 0.1 mbar up to 700 mbar. Subsequently, the samples were investigated using FTIR transmission spectroscopy, contact angle measurement, X-ray photoelectron spectrometry (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray reflectometry (XRR), surface acoustic wave spectrometry (SAW), and purged UV spectroscopic ellipsometry (PUVSE).

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Microelectronic Engineering

ISSN

0167-9317

e-ISSN

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Volume of the periodical

85

Issue of the periodical within the volume

10

Country of publishing house

DE - GERMANY

Number of pages

4

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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