Study of oxygen precipitates in silicon using Bragg and Laue x-ray diffraction

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F08%3A00027771" target="_blank" >RIV/00216224:14310/08:00027771 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Study of oxygen precipitates in silicon using Bragg and Laue x-ray diffraction

Original language description

The experiments were performed on Czochralski-grown Si wafers. The oxygen precipitate sizes and deformation of the surrounding lattice was determined from diffuse x-ray scattering aroung reciprocal lattice points. In the Laue diffraction the precipitatesize and concentration can be determined from the simultaneous measurement of diffracted and transmitted beam intensity.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů