Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F09%3A00030131" target="_blank" >RIV/00216224:14310/09:00030131 - isvavai.cz</a>

Alternative codes found

RIV/00216275:25310/09:00008507 RIV/00216305:26210/09:PU85279

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films

Original language description

The optical characterisation of the As33Se67 and Ge2Sb2Te5 chalcogenide thin films is carried out using the combined method of VASE and SR. This method permits to determine both structural and dispersion parameters describing the thin films exhibiting various defects. The structural model is based on including roughness, overlayers and thickness non-uniformity. The dispersion models are based on parametrisation of the joint density of states. These models, unlike the classical models derived from the Lorentz oscillator model, can describe finite bands which allows to introduce a parameter proportional to the density of electrons. It is shown that this method enables to investigate quantitatively changes in the electronic structure of the materials caused by phase transitions which is demonstrated on the Ge2Sb2Te5. It is shown that the combined method with including true structural and dispersion models is a powerful tool for the optical characterisation of thin films exhibiting disorde

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/FT-TA3%2F142" target="_blank" >FT-TA3/142: Analysis of the optical properties of solar cells.</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Optoelectronics and Advanced Materials

ISSN

1454-4164

e-ISSN

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Volume of the periodical

11

Issue of the periodical within the volume

12

Country of publishing house

RO - ROMANIA

Number of pages

8

Pages from-to

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UT code for WoS article

ISI:00027349080

EID of the result in the Scopus database

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