X-RAY LAUE DIFFRACTION STUDY OF OXYGEN PRECIPITATES IN CZOCHRALSKI SILICON
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F11%3A00050402" target="_blank" >RIV/00216224:14310/11:00050402 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
X-RAY LAUE DIFFRACTION STUDY OF OXYGEN PRECIPITATES IN CZOCHRALSKI SILICON
Original language description
In the presented article, oxygen precipitates in annealed Czochralski silicon were studied by X-ray diffraction in Laue geometry.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA202%2F09%2F1013" target="_blank" >GA202/09/1013: Nucleation and growth of oxygen precipitates in silicon</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Structure in Chemistry, Biology, Physics and Technology
ISSN
1211-5894
e-ISSN
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Volume of the periodical
18
Issue of the periodical within the volume
3
Country of publishing house
CZ - CZECH REPUBLIC
Number of pages
5
Pages from-to
204-208
UT code for WoS article
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EID of the result in the Scopus database
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