Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F12%3A00058147" target="_blank" >RIV/00216224:14310/12:00058147 - isvavai.cz</a>

Alternative codes found

RIV/68081723:_____/12:00378029 RIV/00216224:14740/12:00065985

Result on the web

<a href="http://dx.doi.org/10.1016/j.physb.2011.08.063" target="_blank" >http://dx.doi.org/10.1016/j.physb.2011.08.063</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.physb.2011.08.063" target="_blank" >10.1016/j.physb.2011.08.063</a>

Result language

angličtina

Original language name

Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods

Original language description

We have investigated oxygen precipitation in Czochralski silicon wafers focusing on influence of nucleation temperature and high temperature pre-anneal during common three step treatment.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica B condensed matter

ISSN

0921-4526

e-ISSN

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Volume of the periodical

407

Issue of the periodical within the volume

15

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

4

Pages from-to

3002-3005

UT code for WoS article

000305790800047

EID of the result in the Scopus database

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