Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F13%3A00068098" target="_blank" >RIV/00216224:14310/13:00068098 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.mseb.2012.10.017" target="_blank" >http://dx.doi.org/10.1016/j.mseb.2012.10.017</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mseb.2012.10.017" target="_blank" >10.1016/j.mseb.2012.10.017</a>
Alternative languages
Result language
angličtina
Original language name
Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
Original language description
In this paper a new process for the preparation of thin silicon dioxide (SiO2) film is presented: the oxidation of c-Si (1 1 1) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmosphericpressure in air and oxygen atmosphere has been used. The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorptionspectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO2 layers were obtained with oxidation rates comparable to thermal oxidation.
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/ED2.1.00%2F03.0086" target="_blank" >ED2.1.00/03.0086: Regional R&D center for low-cost plasma and nanotechnology surface modifications</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Science & Engineering B
ISSN
0921-5107
e-ISSN
—
Volume of the periodical
178
Issue of the periodical within the volume
9
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
5
Pages from-to
651-655
UT code for WoS article
000318581800018
EID of the result in the Scopus database
—