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Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F13%3A00107017" target="_blank" >RIV/00216224:14310/13:00107017 - isvavai.cz</a>

  • Result on the web

    <a href="https://journals.aps.org/prb/pdf/10.1103/PhysRevB.87.075311" target="_blank" >https://journals.aps.org/prb/pdf/10.1103/PhysRevB.87.075311</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1103/PhysRevB.87.075311" target="_blank" >10.1103/PhysRevB.87.075311</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain

  • Original language description

    This work presents an experimental method to tune the degree of heavy-hole (HH) and light-hole (LH) mixing of the ground state of quantum dots (QDs). A ferroelectric crystal is used to apply reversible anisotropic biaxial stress to thin nanomembranes, containing GaAs/AlGaAs QDs. The stress-induced modification of the QD anisotropy leads to a change of the relative intensity of the two emission lines produced by the recombination of neutral bright excitonic states. Such a change is ascribed to a variation of the degree of HH-LH mixing. At the same time the modified anisotropy produces a change of the excitonic fine structure splitting (FSS). Model calculations provide a qualitative insight into the relation between strain, HH-LH mixing, and the FSS in epitaxial GaAs/AlGaAs QDs.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10300 - Physical sciences

Result continuities

  • Project

    <a href="/en/project/GA202%2F09%2F0676" target="_blank" >GA202/09/0676: Impact of capping layers on electronic states in quantum dots</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physical Review B

  • ISSN

    1098-0121

  • e-ISSN

    2469-9969

  • Volume of the periodical

    87

  • Issue of the periodical within the volume

    7

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    5

  • Pages from-to

    1-5

  • UT code for WoS article

    000314874800015

  • EID of the result in the Scopus database

    2-s2.0-84874535216