Atomic layer deposition of nanocrystallite arrays of copper(I) chloride for optoelectronic structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F17%3A00108725" target="_blank" >RIV/00216224:14310/17:00108725 - isvavai.cz</a>
Result on the web
<a href="https://link.springer.com/article/10.1007/s10854-017-6973-8" target="_blank" >https://link.springer.com/article/10.1007/s10854-017-6973-8</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10854-017-6973-8" target="_blank" >10.1007/s10854-017-6973-8</a>
Alternative languages
Result language
angličtina
Original language name
Atomic layer deposition of nanocrystallite arrays of copper(I) chloride for optoelectronic structures
Original language description
Zinc blende structure gamma-copper(I) chloride is a wide bandgap semiconductor with high exciton and biexciton binding energies. gamma-CuCl has applications in UV-wavelength optoelectronic structures which can exploit these characteristics, such as 4-wave mixing and optical bistability. For these purposes, a controllable method of achieving thin films and nanocrystallite arrays is necessary. Atomic layer deposition (ALD) of nanocrystallites and thin films of gamma-CuCl under restricted conditions has previously been demonstrated. This paper greatly extends the previous work and unequivocally confirms that ALD growth takes place over a range of deposition parameters, as characterised by growth saturation with increasing precursor dose, deposition rate independent of temperature and linear growth rate once a complete film has been formed. Arrays of nanocrystallites of different sizes can be controllably deposited by varying the number of ALD cycles within the initial nucleation region. In this region two distinct growth regimes have been observed depending on the length of the post-chloride precursor purge pulse. Long purge time results in retarded nucleation whereas short pulse time shows enhanced nucleation compared to a strictly linear process. The zinc blende gamma-CuCl phase was confirmed with both X-ray analysis and also the signature excitonic Z(1,2) and Z(3) peaks in optical absorption, with no evidence of other impurities. This demonstrates that ALD is a suitable technique for the controllable deposition of thin films and arrays of nanocrystallites of CuCl which may facilitate the use of CuCl in thin film or nanocluster form for further exploration in optoelectronic and photonic applications.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN
0957-4522
e-ISSN
1573-482X
Volume of the periodical
28
Issue of the periodical within the volume
16
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
11695-11701
UT code for WoS article
000406196200018
EID of the result in the Scopus database
2-s2.0-85019552777