Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F18%3A00102267" target="_blank" >RIV/00216224:14310/18:00102267 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1107/S1600576718001450" target="_blank" >http://dx.doi.org/10.1107/S1600576718001450</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1107/S1600576718001450" target="_blank" >10.1107/S1600576718001450</a>

Result language
angličtina
Original language name
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals
Original language description
The scanning X-ray nanodiffraction technique is used to reconstruct the three- dimensional (3D) distribution of lattice strain and Ge concentration in compositionally graded Si1-xGex microcrystals epitaxially grown on Si pillars.
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: Central european institute of technology</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Result description