Growth temperature dependent strain in relaxed Ge microcrystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F18%3A00105372" target="_blank" >RIV/00216224:14310/18:00105372 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.tsf.2018.08.033" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2018.08.033</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2018.08.033" target="_blank" >10.1016/j.tsf.2018.08.033</a>
Alternative languages
Result language
angličtina
Original language name
Growth temperature dependent strain in relaxed Ge microcrystals
Original language description
Using high resolution X-ray diffraction with reciprocal space mapping, we obtain the lattice parameters, strain and degree of relaxation at different growth temperatures of microcrystals.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
—
Volume of the periodical
664
Issue of the periodical within the volume
OCT
Country of publishing house
CH - SWITZERLAND
Number of pages
9
Pages from-to
115-123
UT code for WoS article
000444839700018
EID of the result in the Scopus database
2-s2.0-85052735548