Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F23%3A00131418" target="_blank" >RIV/00216224:14310/23:00131418 - isvavai.cz</a>
Result on the web
<a href="https://opg.optica.org/ome/fulltext.cfm?uri=ome-13-7-2020&id=532139" target="_blank" >https://opg.optica.org/ome/fulltext.cfm?uri=ome-13-7-2020&id=532139</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1364/OME.493426" target="_blank" >10.1364/OME.493426</a>
Alternative languages
Result language
angličtina
Original language name
Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry
Original language description
Spectroscopic ellipsometry measurements were performed on antiferromagnetic semiconductor CuFeS2 grown via molecular beam epitaxy. UV/Visible and IR ellipsometry data was merged and modeled to derive the dielectric function of CuFeS2 from 30 meV to 4.5 eV. The CuFeS2 samples were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and cross-section scanning electron microscopy (SEM) which gave the crystal quality, surface roughness and sample film thickness. A critical point analysis revealed a direct band gap of 0.76 eV, while modeling gives a carrier concentration of 8 & PLUSMN; 2 x 1019 & SIM;cm-3 and an estimate of the indirect band gap of 0.5 eV. Optically active infrared phonons were observed at 319 cm-1 and 350 cm-1 with significant Raman active modes at 85.8 cm-1, 265 cm-1, 288 cm-1, 318 cm-1 and 377 cm-1. The fitted optical constants were then used to characterize the crystal quality and spatial uniformity.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Optical Materials Express
ISSN
2159-3930
e-ISSN
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Volume of the periodical
13
Issue of the periodical within the volume
7
Country of publishing house
US - UNITED STATES
Number of pages
16
Pages from-to
2020-2035
UT code for WoS article
001033609700001
EID of the result in the Scopus database
2-s2.0-85187544496