Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F12%3A00057272" target="_blank" >RIV/00216224:14740/12:00057272 - isvavai.cz</a>

Result on the web

<a href="http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no" target="_blank" >http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.3677995" target="_blank" >10.1063/1.3677995</a>

Result language

angličtina

Original language name

Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

Original language description

The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GP202%2F09%2FP410" target="_blank" >GP202/09/P410: Strain engineering in diluted magnetic semiconductors</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

111

Issue of the periodical within the volume

2

Country of publishing house

US - UNITED STATES

Number of pages

5

Pages from-to

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UT code for WoS article

000299792400075

EID of the result in the Scopus database

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