Three Dimensional Heteroepitaxy: A New Path For Monolithically Integrating Mismatched Materials With Silicon

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F12%3A00067863" target="_blank" >RIV/00216224:14740/12:00067863 - isvavai.cz</a>

Result on the web

<a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6400698" target="_blank" >http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6400698</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/SMICND.2012.6400698" target="_blank" >10.1109/SMICND.2012.6400698</a>

Result language

angličtina

Original language name

Three Dimensional Heteroepitaxy: A New Path For Monolithically Integrating Mismatched Materials With Silicon

Original language description

In the quest for a Ge x-ray detector monolithically integrated onto a Si-CMOS chip we developed a novel method for combining dissimilar materials that may provide a solution to the main problems of heteroepitaxy, e.g. high threading dislocation densities, wafer bowing and cracks.

Czech name

—

Czech description

—

Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

2012 International Semiconductor Conference (CAS) Vols 1 and 2

ISBN

9781467307369

ISSN

1545-827X

e-ISSN

—

Number of pages

6

Pages from-to

45-50

Publisher name

IEEE

Place of publication

New York

Event location

Sinaia, Romania

Event date

Oct 15, 2012

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000314223700006