Process-induced inhomogeneities in higher asymmetry angle X-ray monochromators
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F13%3A00070947" target="_blank" >RIV/00216224:14740/13:00070947 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2025142" target="_blank" >http://dx.doi.org/10.1117/12.2025142</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2025142" target="_blank" >10.1117/12.2025142</a>
Alternative languages
Result language
angličtina
Original language name
Process-induced inhomogeneities in higher asymmetry angle X-ray monochromators
Original language description
Beam inhomogeneities of asymmetric Ge(220)-based V-shaped and single bounce monochromators have been studied both in metrological and imaging applications for photon energies around 8 keV. Presence of growth striations in graded GeSi, grains in single Cucrystal, and strains in thermally tuned V-channel monochromators observed in X-ray topographs excludes these materials from imaging applications. As for stochastic surface processing, chemomechanical polishing (CMP) produces better surface homogeneity than chemical polish. However, CMP is more difficult to be applied in V-channels, where chemical polishing is prefered. For comparison, measurements on surfaces processed by a deterministic mechanical method of single point diamond turning (SPDT) have shown SPDT to be a perspective technology. Again, to prepare deep grooves with this technique is also a challenge, mainly for tool makers. Some process induced features are observed as wavefield distortions in interference fringes.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: Central european institute of technology</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Advances in X-Ray/EUV Optics and Components VIII
ISBN
9780819496980
ISSN
0277-786X
e-ISSN
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Number of pages
8
Pages from-to
"88480U-1-88480U-8"
Publisher name
SPIE-INT SOC OPTICAL ENGINEERING
Place of publication
USA
Event location
San Diego
Event date
Aug 26, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000326748800024