Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F16%3A00090003" target="_blank" >RIV/00216224:14740/16:00090003 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.858.147" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.858.147</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.858.147" target="_blank" >10.4028/www.scientific.net/MSF.858.147</a>

Result language
angličtina
Original language name
Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges
Original language description
The stacking faults (SFs) in 3C-SiC epitaxially grown on ridges deeply etched into Si(001) substrates offcut towards [110] were quantitatively analyzed by electron microscopy and X-ray diffraction.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Result description