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EN
ČeštinaEnglish

Raman scattering from Ge nanocrystals on Si substrates: problems and solutions

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F00%3A00000040" target="_blank" >RIV/00216275:25310/00:00000040 - isvavai.cz</a>

  • Result on the web

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  • DOI - Digital Object Identifier

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Alternative languages

  • Result language

    angličtina

  • Original language name

    Raman scattering from Ge nanocrystals on Si substrates: problems and solutions

  • Original language description

    Raman scattering from Ge nanocrystals on Si substrates was studied

  • Czech name

    —

  • Czech description

    —

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

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Result continuities

  • Project

    —

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2000

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Nanostructures: Physics and Technology

  • ISBN

    —

  • ISSN

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  • e-ISSN

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  • Number of pages

    4

  • Pages from-to

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  • Publisher name

    Ioffe Institute St Petersburg

  • Place of publication

    St Petersburg, Russia

  • Event location

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  • Event date

    —

  • Type of event by nationality

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  • UT code for WoS article

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