Thin amorphous chalcogenide films of pure and praseodymium doped Ge-Ga-Se system prepared by pulsed laser deposition

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F00%3A00000062" target="_blank" >RIV/00216275:25310/00:00000062 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Thin amorphous chalcogenide films of pure and praseodymium doped Ge-Ga-Se system prepared by pulsed laser deposition

Original language description

Thin amorphous chalcogenide films of pure and praseodymium doped Ge-Ga-Se system prepared by pulsed laser deposition

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

CA - Inorganic chemistry

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2000

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

10th International Conference on Solid Films and Surfaces

ISBN

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ISSN

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e-ISSN

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Number of pages

1

Pages from-to

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Publisher name

Princeton University

Place of publication

USA, New Jersey

Event location

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Event date

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Type of event by nationality

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UT code for WoS article

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