The Effect of Titanium Diboride Addition on the Thermoelectric Properties of P-FeSi2 Semiconductors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F04%3A00001333" target="_blank" >RIV/00216275:25310/04:00001333 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

The Effect of Titanium Diboride Addition on the Thermoelectric Properties of P-FeSi2 Semiconductors

Original language description

Beta-FeSi2-TiB2 composites with various amounts of TiB2, from 0 up to 30 vol%, were prepared by hot pressing. The electrical and thermal conductivities, and the Seebeck coefficient were measured as a function of temperature. The results show that the thermal and electrical transport behavior of the composites is different as the volume fraction of TiB2 is below and above about 0.255. A 5 vol% TiB2 added sample has higher figure of merit than one without TiB2 for temperatures above 650 K. The influence of an additional phase, -FeSi, formed during the hot pressing, on the thermoelectric properties of the -FeSi2-TiB2 composites was also discussed.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2004

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Solid State Communications

ISSN

0038-1098

e-ISSN

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Volume of the periodical

131

Issue of the periodical within the volume

5

Country of publishing house

GB - UNITED KINGDOM

Number of pages

5

Pages from-to

325-329

UT code for WoS article

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EID of the result in the Scopus database

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