Nanostructuring of organic and chalcogenide resists by direct DUV laser beam writing

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F04%3A00001370" target="_blank" >RIV/00216275:25310/04:00001370 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Nanostructuring of organic and chalcogenide resists by direct DUV laser beam writing

Original language description

A direct writing DUV laser lithography system was used to write surface relief gratings into an organic positive DUV resist and into amorphous chalcogenide layers. For both material groups feature sizes down to 160 nm with aspect ratios of two and more were realised. The nanostructures in chalcogenide layers emerge directly during the writing process, without any development or etching process.

Czech name

Nanostruktura organických a chalcogenidových resistů připravených metodou "direct DUV laser beam writing"

Czech description

"Byly studovány vlastnosti organických a chalkogenidových resistů připravených metodou direct DUV laser beam writing"

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CA - Inorganic chemistry

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2004

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Electronics Letters

ISSN

1350-911X

e-ISSN

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Volume of the periodical

40

Issue of the periodical within the volume

3

Country of publishing house

GB - UNITED KINGDOM

Number of pages

2

Pages from-to

1-2

UT code for WoS article

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EID of the result in the Scopus database

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