Pulsed laser deposition of As rich amorphous thin films of As-Se system

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F04%3A00001531" target="_blank" >RIV/00216275:25310/04:00001531 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Pulsed laser deposition of As rich amorphous thin films of As-Se system
Original language description
Thin amorphous AsxSe100-x (x=50, 57.1, 60) films were prepared using pulsed laser deposition (PLD). Raman scattering spectra and some optical properties (optical gap, index of refraction) of as-deposited films and their light-induced changes were studied. The structure of PLD films is formed mainly by As-based pyramids. Light-induced changes of Raman spectra of As-Se thin films are attributed to dissociation of As4Se3 cage-like structural units also present in the structure. Giant changes in index of refraction values and also significant photo-induced bleaching of the films after the exposure of as-deposited films are observed and discussed.
Czech name
Pulsní laserová depozice arsenem bohatých tenkých vrstev systému As-Se
Czech description
Pulsní laserová depozice arsenem bohatých tenkých vrstev systému As-Se

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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