DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F06%3A00004426" target="_blank" >RIV/00216275:25310/06:00004426 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3
Original language description
Recently, a new type of diluted magnetic semiconductors based on the tetradymite-type structure was described [1,2]. In this contribution, we compare the transport and magnetic properties of Sb2-xVxTe3 in the single crystalline form (x = 0.0-0.03) with the properties of thin films grown by MBE in which the content of vanadium is much higher (x = 0.0-0.35). It was found that the vanadium-doping in single crystals of Sb2Te3 does not change the concentration of holes yet it gives rise to ferromagnetism atlow temperatures. The Curie temperature TC increases with the vanadium content and reaches 22 K for a single crystal of Sb1.97V0.03Te3. In the case of thin films of Sb2-xVxTe3, the concentration of holes determined from the Hall effect increases with theincreasing concentration of vanadium and the Curie temperature of a film with x = 0.35 reaches at least 177 K, the temperature comparable or higher than that obtained with Mn-doped GaAs.
Czech name
DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3
Czech description
Recently, a new type of diluted magnetic semiconductors based on the tetradymite-type structure was described [1,2]. In this contribution, we compare the transport and magnetic properties of Sb2-xVxTe3 in the single crystalline form (x = 0.0-0.03) with the properties of thin films grown by MBE in which the content of vanadium is much higher (x = 0.0-0.35). It was found that the vanadium-doping in single crystals of Sb2Te3 does not change the concentration of holes yet it gives rise to ferromagnetism atlow temperatures. The Curie temperature TC increases with the vanadium content and reaches 22 K for a single crystal of Sb1.97V0.03Te3. In the case of thin films of Sb2-xVxTe3, the concentration of holes determined from the Hall effect increases with theincreasing concentration of vanadium and the Curie temperature of a film with x = 0.35 reaches at least 177 K, the temperature comparable or higher than that obtained with Mn-doped GaAs.
Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
21st General Conference of the EPS Condensed Matter Division
ISBN
2-914771-32-0
ISSN
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e-ISSN
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Number of pages
1
Pages from-to
252
Publisher name
Deutschen Physikalischen Gesellschaft
Place of publication
Dresden
Event location
Dresden
Event date
Mar 27, 2006
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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