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Hydrostatic pressure enhancement of the Curie temperature and anomalous Hall effect in Sb2-xCrxTe3

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F06%3A00004427" target="_blank" >RIV/00216275:25310/06:00004427 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Hydrostatic pressure enhancement of the Curie temperature and anomalous Hall effect in Sb2-xCrxTe3

  • Original language description

    The narrow band gap tetradymite-type semiconductors with the form AV2 BV I 3 (A = Sb, Bi and B = Se, Te) are normally associated with thermoelectric cooling devices. However, Sb2Te3 doped with V or Cr and Bi2Te3 doped with Fe display a ferromagnetic transition at low temperatures. We have investigated electrical transport properties of bulk single crystals of the ferromagnetic diluted magnetic semiconductor Sb2-xCrxTe3 under varying pressure (0 GPa to 1.5 GPa), temperature (2 K to 300 K), and magnetic fields (0 T to 6 T). High pressure measurements afford a reversible way to tune both the electronic structure and magnetic interactions of these materials. The behavior of the Curie temperature TC can be monitored via the position of the peak in the resistance data associated with the ferromagnetic transition. We observe that TC increases with increasing pressure in this compound. The anomalous Hall effect with clear hysteresis is also observed below TC, and trends with pressure will be d

  • Czech name

    Hydrostatic pressure enhancement of the Curie temperature and anomalous Hall effect in Sb2-xCrxTe3

  • Czech description

    The narrow band gap tetradymite-type semiconductors with the form AV2 BV I 3 (A = Sb, Bi and B = Se, Te) are normally associated with thermoelectric cooling devices. However, Sb2Te3 doped with V or Cr and Bi2Te3 doped with Fe display a ferromagnetic transition at low temperatures. We have investigated electrical transport properties of bulk single crystals of the ferromagnetic diluted magnetic semiconductor Sb2-xCrxTe3 under varying pressure (0 GPa to 1.5 GPa), temperature (2 K to 300 K), and magnetic fields (0 T to 6 T). High pressure measurements afford a reversible way to tune both the electronic structure and magnetic interactions of these materials. The behavior of the Curie temperature TC can be monitored via the position of the peak in the resistance data associated with the ferromagnetic transition. We observe that TC increases with increasing pressure in this compound. The anomalous Hall effect with clear hysteresis is also observed below TC, and trends with pressure will be d

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2006

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Bulletin of the American Physical Society

  • ISSN

    0003-0503

  • e-ISSN

  • Volume of the periodical

    N

  • Issue of the periodical within the volume

    51

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    2

  • Pages from-to

    564-565

  • UT code for WoS article

  • EID of the result in the Scopus database