Ga:La:S amorphous thin films prepared by pulsed laser deposition.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F08%3A00007565" target="_blank" >RIV/00216275:25310/08:00007565 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Ga:La:S amorphous thin films prepared by pulsed laser deposition.
Original language description
Ga:La:S amorphous thin films prepared by pulsed laser deposition were studied.
Czech name
Amorfní tenké vrstvy Ga:La:S připravené pulzní laserovou depozicí.
Czech description
Byly studovány amorfní tenké vrstvy Ga:La:S připravené pulzní laserovou depozicí.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of ICTF14 & RSD2008
ISBN
978-90-334-7347-0
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
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Publisher name
Ghent University
Place of publication
Ghent
Event location
Ghent, Belgium
Event date
Nov 20, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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