Figure of Merit of (Sb(0.75)Bi(0.25))(2-x)In(x)Te(2.8)Se(0.2) Single Crystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F10%3A39881645" target="_blank" >RIV/00216275:25310/10:39881645 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Figure of Merit of (Sb(0.75)Bi(0.25))(2-x)In(x)Te(2.8)Se(0.2) Single Crystals

Original language description

We have shown previously that indium doping is beneficial for thermoelectric properties of (Sb(0.75)Bi(0.25))(2)Te(3). This effect was ascribed to a change in the magnitude and mechanism of hole scattering and a decrease in thermal conductivity. Since the state-of-the-art material for p-type legs in low-temperature applications is the quaternary Bi(0.5)Sb(1.5)Te(3-y)Se(y), we have attempted to dope this material with In, hoping to improve its properties further. Indeed, the doping enhances the figure ofmerit of (Sb(0.75)Bi(0.25))(2-x)In(x)Te(2.8)Se(0.2) by more than 15% compared with the values measured on undoped Sb(0.75)Bi(0.25))(2)Te(2.8)Se(0.2) below room temperature.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

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Volume of the periodical

39

Issue of the periodical within the volume

9

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

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UT code for WoS article

000281393000072

EID of the result in the Scopus database

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