Oxygen assisted photoinduced changes in Ge39Ga2S59 amorphous thin film.

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F10%3A39881718" target="_blank" >RIV/00216275:25310/10:39881718 - isvavai.cz</a>
Alternative codes found
RIV/61389013:_____/10:00350257
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Oxygen assisted photoinduced changes in Ge39Ga2S59 amorphous thin film.
Original language description
Virgin GeGaS film is only a little bleached by the illumination with the band gap or over band gap photons while the film annealed in the argon is practically insensitive to such illumination. Illumination by UV photons leads to significant changes in the surface topology of the virgin or annealed film originated from the film oxidation, which is supported by Fourier transform infrared spectroscopy (Ge-O-Ge bridge), the Raman feature (O3Ge-O-GeO3) and (iii) Atomic Force Microscopy (GeO2 microcrystallineparticles).
Czech name
—
Czech description
—

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
—

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)