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Sputtering and pulsed laser deposition for near and mid-infrared applications: A comparative study of Ge25Sb10S65 and Ge25Sb10Se65 amorphous thin films.

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F11%3A39892140" target="_blank" >RIV/00216275:25310/11:39892140 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1111/j.1744-7402.2010.02571.x" target="_blank" >http://dx.doi.org/10.1111/j.1744-7402.2010.02571.x</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1111/j.1744-7402.2010.02571.x" target="_blank" >10.1111/j.1744-7402.2010.02571.x</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Sputtering and pulsed laser deposition for near and mid-infrared applications: A comparative study of Ge25Sb10S65 and Ge25Sb10Se65 amorphous thin films.

  • Original language description

    The deposition of Ge(25)Sb(10)S(65) and Ge(25)Sb(10)Se(65) amorphous chalcogenide thin films was performed by radio-frequency magnetron sputtering and pulsed laser deposition technique. The deposited layers were characterized by studying their morphology, topography, chemical composition, structure, and optical functions permitting a direct comparison of two deposition methods for obtaining attractive amorphous chalcogenide films. Reactive ion etching was then used to pattern rib/ridge waveguides in sulfide and selenide films with low surface roughness, vertical sidewalls, and reasonable etching rate. Optical losses of fabricated waveguides were measured at 1550 nm with values better than 1 dB/cm obtained for sulfide/selenide films deposited by both techniques.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BH - Optics, masers and lasers

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA104%2F08%2F0229" target="_blank" >GA104/08/0229: Thin films deposited by pulsed lasers</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2011

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    International Journal of Applied Ceramic Technology

  • ISSN

    1546-542X

  • e-ISSN

  • Volume of the periodical

    8

  • Issue of the periodical within the volume

    5

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    11

  • Pages from-to

    990-1000

  • UT code for WoS article

    000297249200002

  • EID of the result in the Scopus database