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Up-conversion in Er3 - doped Ge25Ga5Sb5S65 chalcogenide glass for enhancement of silicon solar cell efficiency.

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39895779" target="_blank" >RIV/00216275:25310/12:39895779 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Up-conversion in Er3 - doped Ge25Ga5Sb5S65 chalcogenide glass for enhancement of silicon solar cell efficiency.

  • Original language description

    Er3+-doped Ge25Ga5Sb5S65 chalcogenide glass was studied as a potential material for up-conversion application to enhancement of silicon solar cell efficiency. Thermal properties were studied via DSC measurement, optical properties via variable angle spectroscopic ellipsometry and photoluminescence measurement. The host chalcogenide glass shows good thermal, chemical and physical properties. The band gap energy is ~2.23 eV which allows to emit green and red luminescent light from 4S3/2 ? 4I15/2 and 4F9/2? 4I15/2 4f-4f transitions of Er3+.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    2012 Symposium on Photonics and Optoelectronics

  • ISBN

    978-1-4577-0911-1

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    566-569

  • Publisher name

    IEEE (Institute of Electrical and Electronics Engineers)

  • Place of publication

    New York

  • Event location

    Shanghai

  • Event date

    May 21, 2012

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article