Preparation and optical properties of thin films of the system Ge28-xGaxS72

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39895990" target="_blank" >RIV/00216275:25310/12:39895990 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Preparation and optical properties of thin films of the system Ge28-xGaxS72
Original language description
Because of the specific properties of chalcogenide glasses, they can be used as potential materials in many devices in electronics and optoelectronics. Therefore it is main issue of research at many academic groups [1]. Bulk samples with compositions Ge28S72, Ge26Ga2S72, Ge24Ga4S72 and Ge22Ga6S72 were prepared by direct synthesis from elements with high purity. The thin films of these glasses were prepared by two different methods. By thermal vacuum evaporation (VE) with three different chambers the three types of thin films were obtained. The forth type of films was prepared by pulsed lased deposition (PLD). The samples of thin films were characterized by X-Ray diffraction analysis (XRD), Energy Dispersive X-Ray analysis (EDX), Raman spectroscopy, UV/VIS spectroscopy and Variable Angle Spectral Ellipsometry (VASE). The different methods of preparation as well as the different chambers have a large influence to the properties of prepared thin films, such as thickness, refractive index
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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