Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F13%3A39896430" target="_blank" >RIV/00216275:25310/13:39896430 - isvavai.cz</a>
Result on the web
<a href="http://www.sciencedirect.com/science/article/pii/S0040609013006275" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0040609013006275</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2013.04.013" target="_blank" >10.1016/j.tsf.2013.04.013</a>

Result language
angličtina
Original language name
Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications
Original language description
Amorphous chalcogenide and alumino-silicate thin films were fabricated by the pulsed laser deposition technique. Prepared films were characterized in terms of their morphology, chemical composition, and optical properties. Multilayered thin film stacks for reflectors and vertical microcavities were designed. Three different reflector designs were formulated and tested including all-chalcogenide layers (As40Se60/Ge25Sb5S70) and mixed chalcogenide-oxide layers (As40Se60/alumino-silicate and Ga10Ge15Te75/alumino-silicate). As40Se60/alumino-silicate reflector showed the best parameters.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Project
<a href="/en/project/GAP106%2F11%2F0506" target="_blank" >GAP106/11/0506: Pulsed laser deposition of amorphous thin films</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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